Method for forming metallic nanowires
US8007864B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Jan 4, 2008 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | May 21, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/62
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming well-aligned metallic nanowires includes: (a) providing a substrate formed with a crystal layer thereon; (b) disposing the substrate in such a manner that the crystal layer faces downwardly; (c) applying a metal salt solution, which contains metal ions therein, to the crystal layer on the substrate; and (d) subjecting the metal ions in the metal salt solution on the crystal of TiO2 layer to a reduction treatment, thereby resulting in reduced metal that grows downward toward earth's gravity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.