Method of manufacturing semiconductor device
US8008152B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2007 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Jun 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, forming the second insulating film comprises forming a lower insulating film containing oxygen and a metal element, thermally treating the lower insulating film in an atmosphere containing oxidizing gas, and forming an upper insulating film on the thermally treated lower insulating film using film forming gas containing at least one of hydrogen and chlorine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.