Dopant implantation method using multi-step implants
US8008158B2 · kind B2 · utility
16Cited by
5References
16Claims
0Family size
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Key dates
| Filing date | Jul 10, 2008 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Sep 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a dopant implant region in a MOS transistor device having a dopant profile having a target dopant concentration includes implanting a first concentration of dopants into a region of a substrate, where the first concentration of dopants is less than the target dopant concentration, and without annealing the substrate after the implanting step, performing at least one second implanting step to implant at least one second concentration of dopants into the region of the substrate to bring the dopant concentration in the region to the target dopant concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.