Semiconductor structure made using improved simultaneous multiple ion implantation process
US8008175B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 19, 2010 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Nov 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus provide for: a first source of plasma (first plasma), which includes a first species of ions, directing the first plasma out along a first axis; a second source of plasma (second plasma), which includes a second, differing, species of ions, directing the second plasma out along a second axis; and an accelerator system in communication with the first and second sources of plasma, and operating to: (i) accelerate the first species of ions at a first magnitude therethrough, and toward a semiconductor wafer, and (ii) simultaneously accelerate the second species of ions at a second magnitude, different from the first magnitude, therethrough, and toward the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.