Method of manufacturing semiconductor device
US8008190B2 · kind B2 · utility
1Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2008 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Nov 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of manufacturing a semiconductor device which includes: providing an insulating film formed above a semiconductor substrate with a processed portion; supplying a surface of the processed portion of the insulating film with a primary reactant from a reaction of a raw material including at least a Si-containing compound; and subjecting the primary reactant to dehydration condensation to form a silicon oxide film on the surface of the processed portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.