Manufacturing method of semiconductor device and semiconductor manufacturing apparatus therefor
US8008193B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2009 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | May 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a manufacturing method for improving the reliability of a semiconductor device having a back electrode. After formation of semiconductor elements on the surface of a silicon substrate, the backside surface thereof, which is opposite to the element formation surface, is subjected to the following steps in a processing apparatus. After deposition of a first metal film over the backside surface of the silicon substrate in a first chamber, it is heat treated to form a metal silicide film. Then, a nickel film is deposited in a third chamber, followed by deposition of an antioxidant conductor film in a second chamber. Heat treatment for alloying the first metal film and the silicon substrate is performed at least prior to the deposition of the nickel film. The first chamber has therefore a mechanism for depositing the first metal film and a lamp heating mechanism.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.