Patent · US Active

Phase-change memory cell having two insulated regions

US8008644B2 · kind B2 · utility

2Cited by

1References

10Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Ludovic Goux · Hannut, BE
Dirk Wouters · Heverlee, BE
Judit Lisoni · Oud-Heverlee, BE
Thomas Gille · Heverlee, BE

Key dates

Filing date	May 18, 2006
Grant date	Aug 30, 2011
Priority date	—
Expiry date	Nov 26, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG11C13/0004
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A phase-change-memory cell is provided which comprises two insulated regions formed in a first phase-change material connected by a region formed in a second phase-change material. The crystallization temperature of the second phase-change material is below the crystallization temperature of the first phase-change material. By locally changing the material properties using a second PCM material, which switches phase at a lower temperature, a localized “hot spot” is obtained.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.