Light-emitting diode device and manufacturing method thereof
US8008680B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2010 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Sep 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.