Alumina substrate and method of making an alumina substrate
US8008682B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2008 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Jul 14, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24999
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An alumina substrate and method of making an alumina substrate using oxidation is provided. Generally, photoresist masks are used to protect selected areas of an aluminum layer. The unprotected or exposed areas of the aluminum layer are then oxidized during a photolithography process. The protected, unexposed areas of the aluminum layer retain their conductive properties while the oxidized areas are converted to alumina, or aluminum oxide, which is non-conductive. Accordingly, an alumina substrate having conductive areas of aluminum is formed. In one embodiment, the alumina substrate includes an alumina layer, one or more aluminum vias formed within the alumina layer, each of the one or more aluminum vias extending between the bottom of the alumina layer and the top of the alumina layer, wherein the one or more aluminum vias are integrally formed within the alumina layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.