Semiconductor light emitting device
US8008683B2 · kind B2 · utility
476Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2009 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | May 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
The present invention provides a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer which are sequentially stacked, wherein an area where the first electrode layer and the first semiconductor layer are in contact with each other is 3 to 13% of an area of the semiconductor light emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.