Semiconductor integrated circuit device including a pad and first mosfet
US8008727B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2008 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Jan 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
To reduce the leak current in the MOSFET connected between the pad and the ground. There are provided a pad PAD for an input or output signal, an n-type MOSFET M1a connected between the pad PAD and the ground and having its gate terminal and backgate connected in common, and a potential control circuit 10 that controls a potential Vb of the gate terminal and the backgate of the n-type MOSFET M1a based on a potential Vin of the pad PAD. The potential control circuit 10 comprises n-type MOSFETs M2 and M3; the n-type MOSFET M1a has its gate terminal and backgate connected to backgates and drains of the n-type MOSFETs M2 and M3; the n-type MOSFET M2 has its source grounded and its gate terminal connected to the pad PAD via a resistance R; and the n-type MOSFET M3 has its source connected to the pad PAD and its gate terminal grounded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.