Characterization technique for dielectric properties of polymers
US8008930B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 23, 2006 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Dec 22, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N22/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A test structure for polymer characterization over a wide frequency range, temperature range and under an applied DC electric field is disclosed. A high resistivity silicon substrate is topped by an adhesion layer. A polymer thin-film is deposited on a patterned metal1 layer which is deposited on top of the adhesion layer. A top metal2 layer is deposited on the polymer thin-film and patterned to form a CPW transmission line. A single bias voltage is applied to the center conductor of the CPW transmission line on metal2 and influences dielectric properties of the polymer. The dielectric permittivity and the loss-tangent of the polymer can be derived as functions of electric field and temperature by measuring the swept frequency scattering parameters and matching the experimental frequency response to the modeled frequency response. The electrical conductance properties of the polymer can be accurately characterized using the test structure over a wide temperature range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.