Etched-facet ridge lasers with etch-stop
US8009711B2 · kind B2 · utility
4Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2009 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Feb 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2214
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.