Method for producing high purity low dielectric constant ceramic and hybrid ceramic films

US8012403B2 · kind B2 · utility

Assignee

• Battelle Memorial Institute · CH

Inventors

• Jerome Birnbaum · Richland, US
• Glen E. Fryxell · Kennewick, US
• Shari Li Xiaohong · Richland, US
• Christopher A. Coyle · Richland, US
• Glen Dunham · Kennewick, US
• Suresh Baskaran · Kennewick, US
• Ralph E. Williford · Kennewick, US

Key dates

• Filing date: Sep 14, 2001
• Grant date: Sep 6, 2011
• Expiry date: May 2, 2026

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C04B2235/72
• WIPO field: Chemical engineering
• WIPO sector: Chemistry

Abstract

Porous ceramic and hybrid ceramic films are useful as low dielectric constant interlayers in semiconductor interconnects. (Hybrid ceramic films are defined as films that contain organic and ceramic molecular components in the structure, as, for example, organosilicates). This invention describes the usefulness of humidity treatments (using specific temperature/humidity treatments as illustrative examples) in increasing mechanical integrity of porous dielectric films with minimal detrimental effect on film porosity or dielectric constant and with no adverse impact on film quality. The efficacy of such treatments is illustrated using surfactant-templated mesoporous silicate films as an example. This invention also describes a specific family of additives to be used with highly pure alkali-metal-free ceramic and hybrid precursors for such dielectric films that will enable better control of the film porosity and quality and lower dielectric constants with the required mechanical integrity. The efficacy of such additives is illustrated using surfactant-templated mesoporous silicate films as a model example. The invention should be broadly applicable to any cross-linked ceramic or hybrid…