Method of forming metal-containing layer using organometallic compounds
US8012536B2 · kind B2 · utility
7Cited by
1References
10Claims
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Key dates
| Filing date | Jun 5, 2008 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Apr 25, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming metal-containing layers are provided where heteroleptic organometallic compounds containing at least one formamidinate ligand are conveyed in a gaseous form to a reactor; and films comprising a metal are deposited on a substrate. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.
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