Method for manufacturing magnetic field detection devices and devices therefrom
US8012771B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2010 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Nov 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/301
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing magnetic field detection devices comprises the operations of manufacturing a magneto-resistive element comprising regions with metallic conduction and regions with semi-conductive conduction. The method comprises the following operations: forming metallic nano-particles to obtain regions with metallic conduction; providing a semiconductor substrate; and applying metallic nano-particles to the porous semiconductor substrate to obtain a disordered mesoscopic structure. A magnetic device comprises a spin valve, which comprises a plurality of layers arranged in a stack which in turn comprises at least one free magnetic layer able to be associated to a temporary magnetisation (MT), a spacer layer and a permanent magnetic layer associated to a permanent magnetisation (MP). The spacer element is obtained by means of a mesoscopic structure of nanoparticles in a metallic matrix produced in accordance with the inventive method for manufacturing magneto-resistive elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.