Insulating film pattern, method for manufacturing the same, and method for manufacturing thin film transistor substrate using the same
US8012845B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2009 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Feb 6, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an insulating film pattern, a first pattern part is formed at one surface of the insulating film pattern to form a source electrode, a drain electrode, and a semiconductor layer of the thin film transistor. The first pattern part is recessed in one surface of the insulating film pattern. The insulating film pattern is formed on a substrate through an imprint scheme, and is deposited on a base substrate having a gate electrode and a gate line through a contact print scheme. A source electrode, drain electrode, and semiconductor layer of a thin film transistor are formed through an inkjet print scheme using a first pattern part of the insulating film pattern. A gate electrode and gate line may be formed using a second pattern part of the insulating film pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.