Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8013363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2007 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Mar 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Under one aspect, a nonvolatile nanotube diode includes: a substrate; a semiconductor element disposed over the substrate, the semiconductor element having an anode and a cathode and capable of forming an electrically conductive pathway between the anode and the cathode; a nanotube switching element disposed over the semiconductor element, the nanotube switching element including a conductive contact and a nanotube fabric element capable of a plurality of resistance states; and a conductive terminal disposed in spaced relation to the conductive contact, wherein the nanotube fabric element is interposed between and in electrical communication with the conductive contact and the conductive contact is in electrical communication with the cathode, and wherein in response to electrical stimuli applied to the anode and the conductive terminal, the nonvolatile nanotube diode is capable of forming an electrically conductive pathway between the anode and the conductive terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.