Nonvolatile semiconductor storage device including a plurality of memory strings
US8013383B2 · kind B2 · utility
53Cited by
5References
11Claims
0Family size
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Key dates
| Filing date | Feb 20, 2009 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Jul 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
Abstract
A nonvolatile semiconductor storage device has a plurality of memory strings in which a plurality of electrically rewritable memory cells are connected in series. The memory string has a columnar semiconductor layer extending in a direction perpendicular to a substrate; a conductive layer formed so as to sandwich a charge storing layer in cooperation with the columnar semiconductor layer; and a metal layer formed so as to be in contact with the top face of the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.