Negative-resistance device with the use of magneto-resistive effect
US8013408B2 · kind B2 · utility
8Cited by
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9Claims
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Key dates
| Filing date | May 19, 2009 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Aug 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/75
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magneto-resistive device has a magnetic free layer (33), a magnetic pinned layer (31) having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer (32) provided between the magnetic free layer and the magnetic pinned layer. The negative-resistance device is characterized in that the negative-resistance device shows negative resistance by making the magnetic free layer continually change the magnetization direction along with the increase of the voltage which is applied to a magneto-resistive device so that electrons flow into the negative-resistance device from a magnetic free layer side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.