Materials, systems and methods for optoelectronic devices
US8013412B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 19, 2010 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Mar 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.