Highly-efficient electron-emitting device and image display apparatus having a substrate with a distribution of nitrogen containing ratio
US8013511B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2009 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Nov 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/0489
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron-emitting device has a pair of device electrodes formed on a substrate and an electroconductive film connected to the device electrodes. The electroconductive film has a first gap between the device electrodes and has a carbon film having a second gap at least in the first gap. The substrate is formed by stacking a nitrogen-contained activation suppressing layer and an activation accelerating layer having a nitrogen containing ratio smaller than that of the activation suppressing layer onto a base and has nitrogen containing ratio distribution in the activation suppressing layer in a film thickness direction. The nitrogen containing ratio of the activation suppressing layer at the activation accelerating layer side is smaller than that at the base side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.