Patent · US Active

Reference voltage circuit

US8013588B2 · kind B2 · utility

9Cited by
4References
14Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 17, 2009
Grant dateSep 6, 2011
Priority date—
Expiry dateDec 17, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG05F3/242
  • WIPO fieldControl
  • WIPO sectorInstruments

Abstract

Provided is a reference voltage circuit capable of generating a temperature-independent reference voltage more stably. Each of N-type metal oxide semiconductor (NMOS) transistors (1) and (2) has a source and a back gate that are short-circuited, and hence threshold voltages (Vth1) and (Vth2) of the NMOS transistors (1) and (2) respectively depend only on process fluctuations in the NMOS transistors (1) and (2) and not on process fluctuations in other elements. As a result, a temperature-independent reference voltage (Vref) may be generated more stably.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.