Resistance variable memory device and method of writing data
US8014190B2 · kind B2 · utility
3Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2011 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Feb 9, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a resistance variable memory cell to a given logic state includes applying a first programming current to the memory cell, executing a verify read of the memory cell by sensing a logic state of the memory cell, and applying a second programming current to the memory cell when the sensed logic state is different than the given logic state, where the second programming current is greater than the first programming current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.