Patent · US Active

Multiple cavity etched-facet DFB lasers

US8014434B2 · kind B2 · utility

2Cited by
10References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 11, 2008
Grant dateSep 6, 2011
Priority date
Expiry dateNov 10, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/4025
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A semiconductor chip has at least two DFB etched facet laser cavities with one set of facets with AR coatings and a second set of etched facets with HR coatings that have a different relative position with respect to the gratings. This creates a difference in the phase between each of the etched facets and the gratings which changes the operational characteristics of the two laser cavities such that at least one of the lasers provides acceptable performance. As a result, the two cavity arrangement greatly improves the yield of the fabricated chips.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.