Etching system
US8016975B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2010 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Aug 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32091
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.