Dual sided processing and devices based on freestanding nitride and zinc oxide films
US8017415B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2009 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Nov 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent conductive oxides. Optoelectronic devices such as LEDs, laser diodes, solar cells, biomedical devices, thermoelectrics, and other optoelectronic devices may be fabricated on the freestanding nitride films. The refractive index of the freestanding nitride films can be controlled via alloy composition. Light guiding or light extraction optical elements may be formed based on freestanding nitride films with or without layers. Dual sided processing is enabled by use of these freestanding nitride films. This enables more efficient output for light emitting devices and more efficient energy conversion for solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.