Method for fabricating an image sensor capable of increasing photosensitivity
US8017425B2 · kind B2 · utility
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2References
18Claims
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Key dates
| Filing date | Apr 14, 2009 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Apr 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/016
Abstract
An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer formed inside the substrate, a photodiode formed in the amorphous silicon layer, and a transfer gate formed over the substrate adjacent to the photodiode and transferring photoelectrons received from the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.