Growth of monocrystalline GeN on a substrate
US8017509B2 · kind B2 · utility
2Cited by
4References
30Claims
0Family size
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Key dates
| Filing date | Jul 20, 2007 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Mar 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02614
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to a temperature between 550° C. and 940° C., exposing the substrate (1) to a nitrogen gas flow. The present invention furthermore provides a structure comprising a monocrystalline GeN layer (4) on a substrate (1). The monocrystalline GeN formed by the method according to embodiments of the invention allows passivation of surface states present at the Ge surface (3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.