Thin film transistor having microcrystalline semiconductor layer and amorphous semiconductor layer
US8017946B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2008 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Jan 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6729
Abstract
The present invention relates to a semiconductor device including a thin film transistor comprising a microcrystalline semiconductor which forms a channel formation region and includes an acceptor impurity element, and to a manufacturing method thereof. A gate electrode, a gate insulating film formed over the gate electrode, a first semiconductor layer which is formed over the gate insulating film and is formed of a microcrystalline semiconductor, a second semiconductor layer which is formed over the first semiconductor layer and includes an amorphous semiconductor, and a source region and a drain region which are formed over the second semiconductor layer are provided in the thin film transistor. A channel is formed in the first semiconductor layer when the thin film transistor is placed in an on state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.