Space-charge-free semiconductor and method
US8018019B2 · kind B2 · utility
1Cited by
3References
12Claims
0Family size
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Key dates
| Filing date | May 8, 2008 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Sep 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/826
Abstract
A semiconductor having a an n-type material and a p-type material, wherein the n-type material and p-type material are joined to form a space-charge-free p-n junction. The energy of the Fermi-level of the n-type material is equal to the energy of the Fermi-level of the p-type material. This allows for the pre-alignment of the Fermi-levels of the n-type and the p-type materials. The semiconductor has minimal or no g-r noise. The semiconductor can be operated at TBLIP in the range of about 220° to about 240° K.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.