Heat transfer device
US8018053B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2008 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Jan 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One example discloses a heat transfer device that can comprise a semiconductor material having a first region and a second region. The first region and the second region are doped to propel a charged carrier from the first region to the second region. The heat transfer device can also comprise an array of pointed tips thermoelectrically communicating with the second region. A heat sink faces the array, and a vacuum tunneling region is formed between the pointed tips and the heat sink. The heat transfer device further can further comprise a power source for biasing the heat sink with respect to the first region. The first region defines an N-type semiconductor material and the second region defines a P-type semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.