Inductively coupled plasma processing apparatus
US8021515B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2005 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Jul 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32458
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An inductively coupled plasma processing apparatus (100) comprises a plasma chamber (12) with a dielectric window (400) forming a self-supporting wall element of the plasma chamber (12). The dielectric window (400) has an external and an internal side with respect to the chamber (12). An electromagnetic field source (140) is arranged in front of the external side of the dielectric window (400) for generating an electromagnetic field within the plasma chamber (12). The field source comprises at least one magnetic core (301, 302, 303). The at least one magnetic core (301, 302, 303) is attached to the external side of the dielectric window (400), such that the at least one magnetic core helps the dielectric window (400) to withstand collapsing forces caused by negative pressure inside said chamber during operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.