Patent · US Active

Inductively coupled plasma processing apparatus

US8021515B2 · kind B2 · utility

2Cited by
7References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 22, 2005
Grant dateSep 20, 2011
Priority date
Expiry dateJul 28, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32458
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An inductively coupled plasma processing apparatus (100) comprises a plasma chamber (12) with a dielectric window (400) forming a self-supporting wall element of the plasma chamber (12). The dielectric window (400) has an external and an internal side with respect to the chamber (12). An electromagnetic field source (140) is arranged in front of the external side of the dielectric window (400) for generating an electromagnetic field within the plasma chamber (12). The field source comprises at least one magnetic core (301, 302, 303). The at least one magnetic core (301, 302, 303) is attached to the external side of the dielectric window (400), such that the at least one magnetic core helps the dielectric window (400) to withstand collapsing forces caused by negative pressure inside said chamber during operation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.