Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

US8021641B2 · kind B2 · utility

Assignees

• Alliance for Sustainable Energy, LLC · US
• HelioVolt Corporation · US

Inventors

• Calvin J. Curtis · Lakewood, US
• Alexander Miedaner · Boulder, US
• Marinus Franciscus Antonius Maria van Hest · Lakewood, US
• David S. Ginley · Evergreen, US
• Jennifer Leisch · Denver, US
• Matthew Taylor · Cincinnati, US
• Billy J. Stanbery · Seattle, US

Key dates

• Filing date: Feb 4, 2010
• Grant date: Sep 20, 2011
• Expiry date: Feb 4, 2030

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C01P2002/88
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.