Method for fabricating light emitting diode
US8021902B2 · kind B2 · utility
14Cited by
2References
18Claims
0Family size
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Key dates
| Filing date | Sep 3, 2009 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Mar 27, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/742
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of fabricating a light emitting diode includes the following steps. A substrate is provided and a first semiconductor layer, an active layer, and a second semiconductor layer are placed on the substrate. A carbon nanotube structure is provided and the carbon nanotube structure is lie on the second semiconductor layer. A first electrode is formed on the carbon nanotube structure. A portion of the first semiconductor layer is exposed and a second electrode is formed on the exposed portion of the first semiconductor layer to obtain the light emitting diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.