Method for producing single crystal silicon solar cell and single crystal silicon solar cell
US8021910B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2007 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Apr 6, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.