Manufacture of cadmium mercury telluride
US8021914B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2005 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Feb 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/1253
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacture of cadmium mercury telluride (CMT) is disclosed. The method involves growing one or more buffer layers on a substrate by molecular beam epitaxy (MBE). Subsequently at least one layer of cadmium mercury telluride, Hg1-xCdxTe where x is between 0 and 1 inclusive, is grown by metal organic vapour phase epitaxy (MOVPE). The use of MBE to grow buffer layers allows a range of substrates to be used for CMT growth. The MBE buffer layers provide the correct orientation for later MOVPE growth of CMT and also prevent chemical contamination of the CMT and attack of the substrate during MOVPE. The method also allows for device processing of the CMT layers to be performed with further MOVPE growth of crystalline CMT layers and/or passivation layers. The invention also relates to new devices formed by the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.