Field effect transistor, method of producing the same, and method of producing laminated member

US8021915B2 · kind B2 · utility

Assignee

• Canon Kabushiki Kaisha · JP

Inventors

• Daisuke Miura · Yokohama, JP
• Tomonari Nakayama · Yokohama, JP
• Toshinobu Ohnishi · Saitama, JP
• Makoto Kubota · Tokyo, JP
• Akane Masumoto · Yokohama, JP
• Hidetoshi Tsuzuki · Yokohama, JP
• Makiko Miyachi · Kawasaki, JP

Key dates

• Filing date: Jan 15, 2009
• Grant date: Sep 20, 2011
• Expiry date: Oct 23, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/311

Abstract

There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.