Method of wire bonding over active area of a semiconductor circuit
US8021976B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2003 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | May 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure are provided to enable wire bond connections over active and/or passive devices and/or low-k dielectrics, formed on an Integrated Circuit die. A semiconductor substrate having active and/or passive devices is provided, with interconnect metallization formed over the active and/or passive devices. A passivation layer formed over the interconnect metallization is provided, wherein openings are formed in the passivation layer to an upper metal layer of the interconnect metallization. Compliant metal bond pads are formed over the passivation layer, wherein the compliant metal bond pads are connected through the openings to the upper metal layer, and wherein the compliant metal bond pads are formed substantially over the active and/or passive devices. The compliant metal bond pads may be formed of a composite metal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.