Phase change memory devices with reduced programming current

US8022382B2 · kind B2 · utility

Assignees

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW
• Ritek Corporation · TW

Inventors

• Li-Shyue Lai
• Denny Tang · Saratoga, US
• Wen-Chin Lin · Daxi District, TW
• Teng-Chien Yu · Hsinchu, TW
• Hui-Fang Tsai · Hsinchu, TW
• Wei Wang · Beijing, CN
• Shyhyeu Wang · Yuli, TW

Key dates

• Filing date: Mar 3, 2006
• Grant date: Sep 20, 2011
• Expiry date: Apr 23, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A phase change memory device and a method of forming the same are provided. The phase change memory device includes a conducting electrode in a dielectric layer, a bottom electrode over the conducting electrode, a phase change layer over the bottom electrode, and a top electrode over the phase change layer. The phase change memory device may further include a heat sink layer between the phase change layer and the top electrode. The resistivities of the bottom electrode and the top electrode are preferably greater than the resistivity of the phase change material in the crystalline state.