Lateral conduction infrared photodetector
US8022390B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2007 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | May 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/107
Abstract
A photodetector for detecting infrared light in a wavelength range of 3-25 μm is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and InxGa1-xSb with 0≦x≦0.5. Impurity doped regions are formed on sidewalls of the mesa structure to provide for a lateral conduction of photo-generated carriers which can provide an increased carrier mobility and a reduced surface recombination. An optional bias electrode can be used in the photodetector to control and vary a cut-off wavelength or a depletion width therein. The photodetector can be formed as a single-color or multi-color device, and can also be used to form a focal plane array which is compatible with conventional read-out integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.