Biosensor and method of manufacturing the same
US8022444B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2008 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Dec 15, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/963
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.