Elimination of glowing artifact in digital images captured by an image sensor
US8022452B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2008 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Jul 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
A source/drain region of a transistor or amplifier is formed in a substrate layer and is connected to a voltage source. A glow blocking structure is formed at least partially around the source/drain region and is disposed between the source/drain region and an imaging array of an image sensor. A trench is formed in the substrate layer adjacent to and at least partially around the source/drain region. The glow blocking structure includes an opaque material formed in the trench and one or more layers of light absorbing material overlying the source/drain region and the opaque material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.