Patent · US Active

Ferroelectric thin films

US8022454B2 · kind B2 · utility

0Cited by

14References

20Claims

0Family size

Assignee

The Trustees of the University of Pennsylvania · US

Inventors

Andrew M. Rappe · Levittown, US
Na Sai · Austin, US
Alexie M. Kolpak · Philadelphia, US

Key dates

Filing date	Jun 16, 2010
Grant date	Sep 20, 2011
Priority date	—
Expiry date	Jun 16, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/31678
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Ferroelectric structures and methods of making the structures are presented. The ferroelectric structures can include an electrode in contact with a ferroelectric thin film. The contact can be arranged so that a portion of the atoms of the ferroelectric thin film are in contact with at least a portion of the atoms of the electrode. The electrode can be made of metal, a metal alloy, or a semiconducting material. A second electrode can be used and placed in contact with the ferroelectric thin film. Methods of making and using the ferroelectric structures are also presented.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.