Semiconductor device having vertical and horizontal type gates and method for fabricating the same
US8022476B2 · kind B2 · utility
3Cited by
2References
16Claims
0Family size
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Key dates
| Filing date | Oct 17, 2008 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Aug 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/151
Abstract
A semiconductor device having both vertical and horizontal type gates and a method for fabricating the same for obtaining high integration of the semiconductor device and integration with other devices while also maximizing the breakdown voltage and operational speed and preventing damage to the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.