Semiconductor apparatus having lateral type MIS transistor
US8022477B2 · kind B2 · utility
2Cited by
10References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2008 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Dec 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.