Semiconductor apparatus
US8022479B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 28, 2008 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Oct 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus includes a semiconductor substrate, an insulating film provided on the semiconductor substrate, and a semiconductor film provided on the insulating film. The semiconductor substrate includes a region of a first current path including at least one diode, the semiconductor film includes a region of a second current path including at least one diode, the first current path and the second current path are connected in parallel to each other, the region of the first current path includes at least part of an area directly below the region of the second current path, and the first current path has a higher resistance than the second current path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.