Surface emitting semiconductor laser, surface emitting semiconductor laser device, optical transmission device, and optical information processing device
US8023543B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2009 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Aug 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/185
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser includes: a semiconductor substrate; a lower reflector that is formed on the semiconductor substrate and includes a semiconductor multilayer of a first conduction type; an upper reflector that is formed above the semiconductor substrate and includes a semiconductor multilayer of a second conduction type; an active region interposed between the lower reflector and the upper reflector; a current confining layer that is interposed between the lower reflector and the upper reflector and has a conductive region having an anisotropic shape in a plane perpendicular to an optical axis; and an electrode that is formed on the upper reflector and has an opening via which a laser beam is emitted, the opening having different edge shapes in directions of the anisotropic shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.