Self-limiting thin film synthesis achieved by pulsed plasma-enhanced chemical vapor deposition
US8025932B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2008 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Mar 21, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Ta2O5 and Al2O3 thin films were fabricated by pulsed plasma-enhanced chemical vapor deposition (PECVD) with simultaneous delivery of O2 and the metal precursor. By appropriately controlling the gas-phase environment self-limiting deposition at controllable rates (˜1 Å/pulse) was obtained. The process was insensitive to substrate temperature, with a constant deposition rate observed from 90-350° C. As-deposited Ta2O5 films under these conditions displayed good dielectric properties. Performance improvements correlate strongly with film density and composition as measured by spectroscopic ellipsometry and Fourier transform infrared spectroscopy. Pulsed PECVD eliminates the need for gas actuation and inert purge steps required by atomic layer deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.