Method of forming contact hole arrays using a hybrid spacer technique
US8026172B2 · kind B2 · utility
8Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2009 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Jan 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One embodiment of the invention provides a method of forming a plurality of contact holes, including forming a first feature and a second feature over an underlying material, forming sidewall spacers on the first and second features, removing the first and second features without removing the sidewall spacers, forming a cover mask at least partially exposing the sidewall spacers, and etching the underlying material using the cover mask and the sidewall spacers as a mask to form the plurality of contact holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.